Variation in Dc Parameters of Gallium Nitride Hemt Due to Illumination
نویسندگان
چکیده
ABSTRACT Mobile phones or portable Hand Set (PHS) use the combination of wireless communication and optical fiber communication. Microwave power transistors play key role in today‟s wireless communication. HEMT is finding wide application due to its high speed. Analytical results for various DC parameters under the optical illumination are presented. The photovoltaic effect at the gate junction is considered which increases the sheet concentration of 2DEG layer.
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